CREE雷达的优势

发布时间：2020-12-04 17:15:33 浏览：1597

CREE公司的GaN HEMT和LDMOS器件非常适合脉冲和连续波应用。从宽带GaN到SiC晶体管到GaN到SiC MMIC功率放大器，CREE支持L、s、C、X和Ku波段的应用，并提供业界最小、最轻、最高效和最高性能的解决方案，其可靠性超过数十亿小时。

CREE的产品组合为在28 V、40 V和50 V下工作的CW应用中的脉冲提供了广泛的高效晶体管和放大器。CREE GaN到SiC HEMT具有业界领先的功率密度、更高的击穿电压、更高的导热性和更好的目标，同时消耗更少的能量。

深圳市立维创展科技是CREE的经销商，CREE公司产品包括：LED芯片、照明LED、背光LED、电源开关装置、射频设备用LED和无线电设备。中铁二院凭借其优越的供应渠道，拥有长期的库存以满足中国市场的需求。欢迎咨询。

详情了解CREE射频微波请点击：http://www.leadwaytk.com/brand/35.html

或联系我们的销售工程师：0755-83050846 QQ: 3312069749

SKU	Technology	Frequency (Min)	Frequency (Max)	Peak Output Power	Gain	Efficiency	Operating Voltage
CMPA3135060S	GaN on SiC	3.1 GHz	3.5 GHz	75 W	29 dB	0.55	50 V
CGH55015F2	GaN on SiC	DC	6 GHz	10 W	12 dB	0.6	28 V
CGH55015F2-AMP	GaN on SiC	5.4 GHz	5.9 GHz	10 W	12 dB	NA	28 V
CGH55015P2	GaN on SiC	DC	6 GHz	10 W	12 dB	0.6	28 V
PTVA030121EA-V1	LDMOS	0.39 GHz	0.45 GHz	12 W	25 dB	0.69	50 V
CGHV27015S	GaN on SiC	DC	6 GHz	15 W	21 dB	0.32	50 V
CMPA2735015D	GaN on SiC	2.7 GHz	3.5 GHz	15 W	32 dB	0.45	50 V
CMPA2735015S	GaN on SiC	2.7 GHz	3.5 GHz	15 W	33 dB	0.5	50 V
CMPA901A020S	GaN on SiC	9 GHz	10 GHz	20 W	35 dB	0.45	28 V
CGH55030F2	GaN on SiC	DC	6 GHz	25 W	12 dB	0.6	28 V
CGH55030F2-AMP	GaN on SiC	5.4 GHz	5.9 GHz	25 W	12 dB	NA	28 V
CGH55030P2	GaN on SiC	DC	6 GHz	25 W	12 dB	0.6	28 V
CMPA801B025D	GaN on SiC	8 GHz	11 GHz	25 W	28 dB	0.45	28 V
CMPA801B025F	GaN on SiC	8 GHz	11 GHz	25 W	16 dB	0.36	28 V
CMPA801B025F-AMP	GaN on SiC	8 GHz	11 GHz	25 W	16 dB	NA	28 V
CMPA801B025P	GaN on SiC	8 GHz	11 GHz	25 W	16 dB	0.36	28 V
PTVA120251EA-V2	LDMOS	0.5 GHz	1.4 GHz	25 W	18 dB	0.54	50 V
CMPA2735030S	GaN on SiC	2.7 GHz	3.5 GHz	30 W	32 dB	0.45	50 V
CMPA9396025S	GaN on SiC	9 GHz	10 GHz	35 W	27 dB	0.45	40 V
CMPA2735030D	GaN on SiC	2.7 GHz	3.5 GHz	30 W	30 dB	0.45	50 V
CMPA801B030D	GaN on SiC	8 GHz	11 GHz	30 W	28 dB	0.42	28 V
CMPA801B030F	GaN on SiC	8 GHz	11 GHz	30 W	16 dB	0.36	28 V
CMPA801B030F-AMP	GaN on SiC	8 GHz	11 GHz	30 W	16 dB	NA	28 V
CMPA5259025F	GaN on SiC	5.2 GHz	5.9 GHz	37 W	32 dB	0.5	28 V
CMPA5259025F-AMP	GaN on SiC	5.2 GHz	5.9 GHz	37 W	32 dB	NA	28 V
CMPA801B030S	GaN on SiC	7.9 GHz	11 GHz	40 W	27 dB	0.4	28 V
CMPA901A035F	GaN on SiC	9 GHz	10 GHz	40 W	34 dB	0.35	28 V
CMPA901A035F-AMP	GaN on SiC	9 GHz	10 GHz	40 W	34 dB	NA	28 V
CGHV96050F2	GaN on SiC	7.9 GHz	9.6 GHz	50 W	10 dB	0.55	40 V
CGHV96050F2-AMP	GaN on SiC	8.4 GHz	9.6 GHz	50 W	10 dB	NA	40 V
CMPA5259050F	GaN on SiC	5.2 GHz	5.9 GHz	50 W	30 dB	0.54	28 V
CMPA5259050F-AMP	GaN on SiC	5.2 GHz	5.9 GHz	50 W	30 dB	NA	28 V
PTVA120501EA-V1	LDMOS	1.2 GHz	1.4 GHz	50 W	17 dB	0.5	50 V
CGH35060F2	GaN on SiC	3.1 GHz	3.5 GHz	60 W	12 dB	0.6	28 V
CGH35060P2	GaN on SiC	3.1 GHz	3.5 GHz	60 W	12 dB	0.6	28 V
CMPA2738060F	GaN on SiC	2.7 GHz	3.8 GHz	80 W	34 dB	0.54	50 V
CMPA2738060F-AMP	GaN on SiC	2.7 GHz	3.8 GHz	80 W	34 dB	NA	50 V
CGHV59070F	GaN on SiC	4.5 GHz	5.9 GHz	70 W	12 dB	0.5	50 V
CGHV59070F-AMP	GaN on SiC	4.8 GHz	5.9 GHz	70 W	12 dB	NA	50 V
CGHV59070P	GaN on SiC	4.5 GHz	5.9 GHz	70 W	12 dB	0.5	50 V
CMPA2735075D	GaN on SiC	2.7 GHz	3.5 GHz	75 W	28 dB	0.61	28 V
CMPA2735075F	GaN on SiC	2.7 GHz	3.5 GHz	75 W	27 dB	0.54	28 V
CGHV96100F2	GaN on SiC	7.9 GHz	9.6 GHz	100 W	10 dB	0.45	40 V
CGHV96100F2-AMP	GaN on SiC	7.9 GHz	9.6 GHz	100 W	10 dB	NA	40 V
CGHV35120F	GaN on SiC	3.1 GHz	3.5 GHz	120 W	>7 dB	0.62	50 V
CGHV96130F	GaN on SiC	8.4 GHz	9.6 GHz	130 W	7.5 dB	0.42	40 V
CGHV35150F	GaN on SiC	2.9 GHz	3.5 GHz	150 W	13.5 dB	0.5	50 V
CGHV35150F-AMP	GaN on SiC	2.9 GHz	3.5 GHz	150 W	13.5 dB	NA
CGHV35150P	GaN on SiC	2.9 GHz	3.5 GHz	150 W	13.5 dB	0.5
CMPA2935150S	GaN on SiC	2.9 GHz	3.5 GHz	150 W
GTVA311801FA-V1	GaN on SiC	2.7 GHz	3.1 GHz	180 W	15 dB	0.7	50 V
LTN/GTVA311801FA-V1	GaN on SiC	2.7 GHz	3.1 GHz	180 W	15 dB	0.7	50 V
PTVA102001EA-V1	LDMOS	0.96 GHz	1.6 GHz	200 W	18.5 dB	0.6	50 V
CGH31240F	GaN on SiC	2.7 GHz	3.1 GHz	240 W	12 dB	0.6	28 V
CGH35240F	GaN on SiC	3.1 GHz	3.5 GHz	240 W	11.6 dB	0.57	28 V
CGHV14250F	GaN on SiC	1.2 GHz	1.4 GHz	250 W	18 dB	0.77	50 V
CGHV14250F-AMP	GaN on SiC	1.2 GHz	1.4 GHz	250 W	18 dB	NA
CGHV14250P	GaN on SiC	1.2 GHz	1.4 GHz	250 W	18 dB	0.77
CGHV59350F	GaN on SiC	5.2 GHz	5.9 GHz	350 W	11 dB	0.55	50 V
CGHV59350F-AMP	GaN on SiC	5.2 GHz	5.9 GHz	350 W	11 dB	NA	50 V
CGHV59350P	GaN on SiC	5.2 GHz	5.9 GHz	350 W	11 dB	0.55	50 V
GTVA123501FA-V1	GaN on SiC	1.2 GHz	1.4 GHz	350 W	18 dB	0.71	50 V
PTVA123501EC-V2	LDMOS	1.2 GHz	1.4 GHz	350 W	17 dB	0.55	50 V
PTVA123501FC-V1	LDMOS	1.2 GHz	1.4 GHz	350 W	17 dB	0.55	50 V
CGHV35400F	GaN on SiC	2.9 GHz	3.5 GHz	400 W	11 dB	0.6	50 V
CGHV35400F-AMP	GaN on SiC	2.9 GHz	3.5 GHz	400 W	11 dB	NA	50 V
GTVA104001FA-V1	GaN on SiC	0.96 GHz	1.215 GHz	400 W	19 dB	0.7	50 V
PTVA104501EH-V1	LDMOS	0.96 GHz	1.215 GHz	450 W	17.5 dB	0.58	50 V
PTVA035002EV-V1	LDMOS	0.39 GHz	0.45 GHz	450 W	18 dB	0.64	50 V
CGHV14500F	GaN on SiC	1.2 GHz	1.4 GHz	500 W	16 dB	0.68	50 V
CGHV14500F-AMP	GaN on SiC	1.2 GHz	1.4 GHz	500 W	16 dB	NA
CGHV14500P	GaN on SiC	1.2 GHz	1.4 GHz	500 W	16 dB	0.68
CGHV31500F	GaN on SiC	2.7 GHz	3.1 GHz	500 W	12.75 dB	0.6	50 V
CGHV31500F-AMP	GaN on SiC	2.7 GHz	3.1 GHz	500 W	12.75 dB	NA
GTVA355001	GaN on SiC	2.9 GHz	3.5 GHz	500 W	>7 dB	0.65	50 V
GTVA355001EC	GaN on SiC	2.9 GHz	3.5 GHz	500 W	>7 dB	0.65	50 V
LTN/GTVA355001EC-V1	GaN on SiC	2.9 GHz	3.5 GHz	500 W	>7 dB	0.65	50 V
CGHV37400F	GaN on SiC	3.3 GHz	3.7 GHz	550 W	14 dB	0.55	48 V
GTVA126001EC-V1	GaN on SiC	1.2 GHz	1.4 GHz	600 W	20 dB	0.63	50 V
GTVA126001FC-V1	GaN on SiC	1.2 GHz	1.4 GHz	600 W	20 dB	0.63	50 V
GTVA107001EC-V1	GaN on SiC	0.96 GHz	1.215 GHz	700 W	20 dB	0.7	50 V
GTVA107001EFC-V1	GaN on SiC	0.96 GHz	1.215 GHz	700 W	20 dB	0.7	50 V
GTVA107001FC-V1	GaN on SiC	0.96 GHz	1.215 GHz	700 W	20 dB	0.7	50 V
PTVA047002EV-V1	LDMOS	0.47 GHz	0.806 GHz	700 W	17.5 dB	0.29	50 V
PTVA127002EV-V1	LDMOS	1.2 GHz	1.4 GHz	700 W	16 dB	0.56	50 V
CGHV14800F	GaN on SiC	1.2 GHz	1.4 GHz	800 W	16 dB	0.65	50 V
CGHV14800F-AMP	GaN on SiC	1.2 GHz	1.4 GHz	800 W	16 dB	NA
CGHV14800P	GaN on SiC	1.2 GHz	1.4 GHz	800 W	16 dB	0.65
PTVA101K02EV-V1	LDMOS	1.03 GHz	1.09 GHz	900 W	18 dB	0.65	50 V
GTVA101K42EV-V1	GaN on SiC	0.96 GHz	1.215 GHz	1400 W	17 dB	0.68	50 V
LTN/GTVA101K42EV-V1	GaN on SiC	0.96 GHz	1.215 GHz	1400 W	17 dB	0.68	50 V

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